Shengjie Cao#, Zhiyuan Fu#, et al. "Comprehensive Performance Re-assessment of Hafnia-based Cross-point FeRAM with Ultra-fast and Low-power Operation from Device/Array Perspective". In 2024 International Electron Devices Meeting (IEDM)
Zhiyuan Fu#, Shengjie Cao#, et al."First Demonstration of Hafnia-based Selector-Free FeRAM with High Disturb Immunity through Design Technology Co-Optimization". In 2023 International Electron Devices Meeting (IEDM), pp. 11.3.1-11.3.4, Dec. 2023. (Nominated as Best Student Paper)
Zhiyuan Fu, et al. "Novel Energy-efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Mutipilcation". In 2022 International Electron Devices Meeting (IEDM), pp. 24.5.1-24.5.4, Dec. 2022
Zhiyuan Fu, et al. "New Understanding of Memory Window Reduction Induced by Ferroelectric Dynamics for HfO 2-based 1T1C FeRAM". In 2023 Silicon Nanoelectronics Workshop (SNW), pp. 55-56, Jun. 2023
Zhiyuan Fu, et a. "Device modeling and application simulation of ferroelectric-FETS with dynamic multi-domain behavior". In 2020 China Semiconductor Technology International Conference (CSTIC), pp. 1.88.1-1.88.3, Jun. 2020.